View BGA777L7_4516272.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BGA777L7 single-band umts lna (2300 - 2700 mhz) data sheet, v3.0, july 2009 rf & protection devices
edition 2009-07-02 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2009. all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the app lication of the device, infi neon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology , delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain da ngerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the hu man body, or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
data sheet 3 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna BGA777L7 revision history: 2009-07-02 , v3.0 previous version: 2009-0 2-18, v1.0 preliminary page subjects (major cha nges since last revision) 7 updated dc characteristics (added limits) 8 added supply current and power gain characteristics 9 updated rf characteristics for applic ation board bga7xxl7 and added limits 10, 11 added rf characteristics for umts bands 38 and 40 9-11 updated footnotes 12-16 updated measured performance for application board bga7xxl7 17 updated application circuit schemat ic for application board bga7xxl7 18, 19 added application circuit schematic for umts bands 38 and 40 20, 21 updated application board
data sheet 4 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.5 gain mode select truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.6 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.7 supply current and power gain characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.8 logic signal characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.9 measured rf characteristics umts band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.10 measured rf characteristics umts band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.11 measured rf characteristics umts band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.12 measured performance band 7 application high gain mode vs. frequency . . . . . . . . . . . . . . . . . . . 12 2.13 measured performance band 7 application high gain mo de vs. temperature . . . . . . . . . . . . . . . . . 13 2.14 measured performance band 7 application low gain mode vs. frequency . . . . . . . . . . . . . . . . . . . 14 2.15 measured performance band 7 application low gain mode vs. temperature . . . . . . . . . . . . . . . . . 16 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1 umts band 7 application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.2 umts band 38 application circuit schemati c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.3 umts band 40 application circuit schemati c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.4 pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.5 application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.1 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 table of contents
data sheet 5 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna description 1 description the BGA777L7 is a low current single -band low noise amplifier mmic for umts bands 7, 38 and 40. the lna is based upon infineon?s proprietary and cost-effective sige:c technology and comes in a low profile tslp-7-1 leadless green package. this document specifies electric al parameters, pinout, applic ation circuit and packaging of the chip. the device fe atures dynamic gain control, temperature stabilization, standb y mode and 2 kv esd protection on-chip as well as matching off chip. figure 1 block diagram of single-band lna features ? gain: 16 / -7 db in high / low gain mode ? noise figure: 1.2 db in high gain mode ? supply current: 4.2 / 0.5 ma in high / low gain mode ? standby mode (< 2 a typ.) ? inputs pre-matched to 50 ? ? 2 kv hbm esd protection ? low external component count ? small leadless tslp-7-1 package (2.0 x 1.3 x 0.39 mm) ? pb-free (rohs compliant) package tslp-7-1 package type package marking chip BGA777L7 tslp-7-1 b7 t1531 %*$/b&klsb%o'yvg %ldvlqj /rjlf &lufxlwu\ 5)287 55() 9&& 5),1 9(1 *1' 9*6
BGA777L7 - low power single-band umts lna electrical characteristics absolute maximum ratings data sheet 6 v3.0, 2009-07-02 2 electrical characteristics 2.1 absolute maximum ratings 2.2 thermal resistance 2.3 esd integrity table 1 absolute maximum ratings parameter symbol values unit note / test condition min. max. supply voltage v cc -0.3 3.6 v supply current i cc 10 ma pin voltage v pin -0.3 v cc + 0.3 v all pins except rf input pin pin voltage rf input pin v rfin -0.3 0.9 v rf input power p rfin 4dbm junction temperature t j 150 c ambient temperature range t a -30 85 c storage temperature range t stg -65 150 c table 2 thermal resistance parameter symbol value unit note / test conditions thermal resistance junction to soldering point r thjs 240 k/w table 3 esd integrity parameter symbol value (typ.) unit note / test conditions esd hardness hbm 1) 1) according to jesd22-a114 v esd-hbm 2000 v all pins
data sheet 7 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna electrical characteristics dc characteristics 2.4 dc characteristics 2.5 gain mode select truth table 2.6 switching times table 4 dc characteristics, t a =25c parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 2.6 2.8 3.0 v supply current high gain mode i cchg 4.2 ma supply current low gain mode i cclg 530 a supply current standby mode i ccoff 0.1 2.0 a logic level high v hi 1.5 2.8 v ven and vgs logic level low v lo -0.2 0.0 0.5 v logic currents ven i enl 0.1 a ven i enh 5.0 6.0 a logic currents vgs i gsl 0.1 avgs i gsh 5.0 6.0 a table 5 truth table control voltage state bands 7, 38, 40 ven vgs hg lg hl off on h h on off l l standby 1) 1) in order to achieve minimum standby current it is encour aged to apply logic low-level at the vgs pin in standby mode although this is not mandatory. details see section 2.4. lh table 6 typical switching times; t a = -30 ... 85 c parameter symbol values unit note / test condition min. typ. max. settling time gainstep t gs 1 s switching lg ? hg
BGA777L7 - low power single-band umts lna electrical characteristics supply current and power gain characteristics; t a =25c data sheet 8 v3.0, 2009-07-02 2.7 supply current and power gain characteristics; t a =25c supply current and power gain high ga in mode versus reference resistor r ref (see figure 2 on page 17 for reference resistor; low gain mode supply cu rrent is independent of reference resistor). 2.8 logic signal characteristics; t a =25c current consumption of logic inputs ven, vgs supply current i cc =f ( r ref ) v cc =2.8v power gain |s 21 | = f ( r ref ) v cc =2.8v logic currents i en = f ( v en ) v cc =2.8 v logic currents i gs = f ( v gs ) v cc =2.8v 1 10 100 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 r ref [k ? ] icc [ma] 10 100 1000 14 14.5 15 15.5 16 16.5 17 r ref [k ? ] power gain [db] 0 0.5 1 1.5 2 2.5 3 0 2 4 6 v en [v] i en [a] 0 0.5 1 1.5 2 2.5 3 0 2 4 6 v gs [v] i gs [a]
data sheet 9 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna electrical characteristics measured rf characteristics umts band 7 2.9 measured rf characteristics umts band 7 table 7 typical characteristics 2650 mhz band t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 17 parameter symbol values unit note / test condition min. typ. max. pass band range band i 2620 2690 mhz current consumption i cchg 4.2 4.9 ma high gain mode i cclg 0.5 0.8 ma low gain mode gain s 21hg 14.4 15.7 17.0 db high gain mode s 21lg -9.6 -7.1 -4.1 db low gain mode reverse isolation 2) 2) verified based on aql; not 100% tested in production s 12hg -34 db high gain mode s 12lg -7 db low gain mode noise figure nf hg 1.2 1.7 db high gain mode nf lg 6.8 db low gain mode input return loss 2) s 11hg -20 db 50 ?, high gain mode s 11lg -10 db 50 ?, low gain mode output return loss 2) s 22hg -20 db 50 ? , high gain mode s 22lg -11 db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production k >2.3 dc to 10 ghz; all gain modes input compression point 2) ip 1dbhg -10 dbm high gain mode ip 1dblg -2 dbm low gain mode inband iip3 2) f 1 - f 2 =1mhz p f1 = p f2 =-37dbm iip3 hg iip3 lg -2 7 dbm high gain mode low gain mode
BGA777L7 - low power single-band umts lna electrical characteristics measured rf characteristics umts band 38 data sheet 10 v3.0, 2009-07-02 2.10 measured rf characteristics umts band 38 table 8 typical characteristics 2600 mhz band t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 3 on page 18 parameter symbol values unit note / test condition min. typ. max. pass band range band i 2570 2620 mhz current consumption i cchg 4.2 ma high gain mode i cclg 0.5 ma low gain mode gain s 21hg 15.5 db high gain mode s 21lg -6.9 db low gain mode reverse isolation 2) 2) verified based on aql; not 100% tested in production s 12hg -34 db high gain mode s 12lg -7 db low gain mode noise figure nf hg 1.2 db high gain mode nf lg 6.8 db low gain mode input return loss 2) s 11hg -15 db 50 ?, high gain mode s 11lg -11 db 50 ?, low gain mode output return loss 2) s 22hg -15 db 50 ? , high gain mode s 22lg -13 db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production k >2.3 dc to 10 ghz; all gain modes input compression point 2) ip 1dbhg -10 dbm high gain mode ip 1dblg -2 dbm low gain mode inband iip3 2) f 1 - f 2 =1mhz p f1 = p f2 =-37dbm iip3 hg iip3 lg -2 7 dbm high gain mode low gain mode
data sheet 11 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna electrical characteristics measured rf characteristics umts band 40 2.11 measured rf characteristics umts band 40 table 9 typical characteristics 2300 mhz band t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 4 on page 19 parameter symbol values unit note / test condition min. typ. max. pass band range band i 2300 2400 mhz current consumption i cchg 4.2 ma high gain mode i cclg 0.5 ma low gain mode gain s 21hg 16.8 db high gain mode s 21lg -7.2 db low gain mode reverse isolation 2) 2) verified based on aql; not 100% tested in production s 12hg -35 db high gain mode s 12lg -7 db low gain mode noise figure nf hg 1.2 db high gain mode nf lg 7.0 db low gain mode input return loss 2) s 11hg -23 db 50 ?, high gain mode s 11lg -12 db 50 ?, low gain mode output return loss 2) s 22hg -15 db 50 ? , high gain mode s 22lg -12 db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production k >2.3 dc to 10 ghz; all gain modes input compression point 2) ip 1dbhg -11 dbm high gain mode ip 1dblg -2 dbm low gain mode inband iip3 2) f 1 - f 2 =1mhz p f1 = p f2 =-37dbm iip3 hg iip3 lg -2 8 dbm high gain mode low gain mode
BGA777L7 - low power single-band umts lna electrical characteristics measured performance band 7 application high gain mode vs. frequency data sheet 12 v3.0, 2009-07-02 2.12 measured performance ba nd 7 application high ga in mode vs. frequency t a =25c, v cc =2.8v, v gs =2.8v, v en =2.8v power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) matching | s 11 | = f ( f ), | s 22 | = f ( f ) gainstep hg-lg | ? s 21 | = f ( f ) 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 13 14 15 16 17 frequency [ghz] power gain [db] 25c ?30c 85c 25c ?30c 85c 25c ?30c 85c 0 2 4 6 8 ?60 ?50 ?40 ?30 ?20 ?10 0 10 20 frequency [ghz] power gain [db] 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 22 22.5 23 23.5 24 frequency [ghz] delta gain [db] 25c ?30c 85c 25c ?30c 85c 25c ?30c 85c
data sheet 13 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna electrical characteristics measured performance band 7 application high gain mode vs. temperature 2.13 measured performance ba nd 7 application high gain mode vs. temperature v cc =2.8v, v gs =2.8v, v en =2.8v, f = 2650 mhz noise figure nf = f ( f ) input compression p1db = f ( f ) power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 frequency [ghz] nf [db] 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 ?14 ?13 ?12 ?11 ?10 ?9 ?8 ?7 ?6 frequency [ghz] p1db [dbm] ?40 ?20 0 20 40 60 80 100 13 14 15 16 17 18 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 3 3.5 4 4.5 5 5.5 6 t a [c] i cc [ma]
BGA777L7 - low power single-band umts lna electrical characteristics measured performance band 7 application low gain mode vs. frequency data sheet 14 v3.0, 2009-07-02 2.14 measured performance band 7 application low ga in mode vs. frequency t a =25c, v cc =2.8v, v gs =0v, v en =2.8v noise figure nf = f ( t a ) input compression p1db = f ( t a ) power gain |s 21 | = f ( f ) power gain wideband |s 21 | = f ( f ) ?40 ?20 0 20 40 60 80 100 0.6 0.8 1 1.2 1.4 1.6 1.8 2 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?14 ?13 ?12 ?11 ?10 ?9 ?8 ?7 ?6 t a [c] p1db [dbm] 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 ?10 ?9 ?8 ?7 ?6 ?5 frequency [ghz] power gain [db] 25c ?30c 85c 25c ?30c 85c 25c ?30c 85c 0 2 4 6 8 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] power gain [db]
data sheet 15 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna electrical characteristics measured performance band 7 application low gain mode vs. frequency matching | s 11 | = f ( f ), | s 22 | = f ( f ) noise figure nf = f ( f ) input compression p1db = f ( f ) 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 22 s 11 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 5 6 7 8 9 10 11 frequency [ghz] nf [db] 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 ?10 ?8 ?6 ?4 ?2 0 2 4 frequency [ghz] p1db [dbm]
BGA777L7 - low power single-band umts lna electrical characteristics measured performance band 7 application low gain mode vs. temperature data sheet 16 v3.0, 2009-07-02 2.15 measured performance ba nd 7 application low gain mode vs. temperature v cc =2.8v, v gs =0v, v en =2.8v, f = 2650 mhz power gain |s 21 | = f ( t a ) supply current i cc = f ( t a ) noise figure nf = f ( t a ) input compression p1db = f ( t a ) ?40 ?20 0 20 40 60 80 100 ?10 ?9 ?8 ?7 ?6 ?5 t a [c] power gain [db] ?40 ?20 0 20 40 60 80 100 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 t a [c] i cc [ma] ?40 ?20 0 20 40 60 80 100 4 5 6 7 8 9 10 t a [c] nf [db] ?40 ?20 0 20 40 60 80 100 ?10 ?8 ?6 ?4 ?2 0 2 4 t a [c] p1db [dbm]
data sheet 17 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna application circuit and block diagram umts band 7 application circuit schematic 3 application circuit and block diagram 3.1 umts band 7 application circuit schematic figure 2 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 10 parts list part number part type manufacturer size comment l1 ... l3 chip inductor various 0402 wirewound, q 50 c1 ... c3 chip capacitor various 0402 rref chip resistor various 0402 rfin 2600 mhz bga 777l 7_appl _band 7_bld.vsd 3 2 1 4 5 6 biasing & logic circuitry rfout rref vcc rfin ven 7gnd vgs l1 3 .3nh c1 2.4 pf rfout 2600 mhz v en = 0 / 2.8 v v gs = 0 / 2.8 v v cc = 2 .8 v c3 10 nf c2 1.5pf l3 3.3nh l2 3.9 nh r ref 8.2k ?
BGA777L7 - low power single-band umts lna application circuit and block diagram umts band 38 application circuit schematic data sheet 18 v3.0, 2009-07-02 3.2 umts band 38 appli cation circuit schematic figure 3 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 11 parts list part number part type manufacturer size comment l1 ... l3 chip inductor various 0402 wirewound, q 50 c1 ... c3 chip capacitor various 0402 rref chip resistor various 0402 rfin 2500 mhz bga 777l7 _appl_ band38 _bld.vsd 3 2 1 4 5 6 biasing & logic circuitry rfout rref vcc rfin ven 7gnd vgs l1 3 .3nh c1 2.4 pf rfout 2500 mhz v en = 0 / 2.8 v v gs = 0 / 2.8 v v cc = 2 .8 v c3 10 nf c2 1.2pf l3 3.6nh l2 4.1 nh r ref 8.2k ?
data sheet 19 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna application circuit and block diagram umts band 40 application circuit schematic 3.3 umts band 40 appli cation circuit schematic figure 4 application circuit wi th chip outline (top view) note: package paddle (pin 0) has to be rf grounded. 3.4 pin definition table 12 parts list part number part type manufacturer size comment l1 ... l2 chip inductor various 0402 wirewound, q 50 c1 ... c3 chip capacitor various 0402 rref chip resistor various 0402 table 13 pin definition and function pin number symbol function 1 rfin lna input (2600 mhz) 2 ven band select control 3 vgs gain step control 4 vcc supply voltage 5 rref bias current reference resistor (high gain mode) 6 rfout lna output (2600 mhz) 7 gnd package paddle; ground connection for lna and control circuitry rfout 2300 mhz bga 777l7 _appl_ band40 _bld.vsd 3 2 1 4 5 6 biasing & logic circuitry rfout rref vcc rfin ven 7gnd vgs c1 56 pf rfin 2300 mhz c2 10pf v en = 0 / 2.8 v v gs = 0 / 2.8 v v cc = 2 .8 v c3 10 nf l2 3.6nh l1 2.7 nh r ref 8.2k ?
BGA777L7 - low power single-band umts lna application circuit and block diagram application board data sheet 20 v3.0, 2009-07-02 3.5 application board figure 5 application board layout on 3-layer fr4. top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 35 m cu metallization, gold pl ated. board size: 21 x 19 mm figure 6 cross-section view of application board %*$/b$ssb%rdugyvg 7rsod\huwrsylhz 0lggohod\huwrsylhz %rwwrpod\huwrsyl hz %*$/b&urvvb6hfwlrqb9lhzyvg pp&rsshu pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu pp)5 pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu
data sheet 21 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna application circuit and block diagram application board figure 7 detail of application board layout note: in order to achieve the same performance as given in this datasheet please follow the suggested pcb-layout as closely as possible. the position of th e gnd vias is critical for rf performance. %*$/b$ssb%rdugbh[dfwyvg 5),1 9(1 9*6 9&& 55() 5)287 *1'
BGA777L7 - low power single-band umts lna physical characteristics package dimensions data sheet 22 v3.0, 2009-07-02 4 physical characteristics 4.1 package dimensions figure 8 recommended footprint and stenci l layout for the tslp-7-1 package figure 9 package outline (top, side and bottom view) figure 10 tape & reel dimensions tslp-7-1-fp v01 smd 0.25 1.4 1.9 0.25 0.2 0.25 0.25 0.2 1.4 1.9 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.2 stencil apertures copper solder mask r0.1 nsmd 0.25 1.4 1.9 0.25 0.2 0.25 0.25 0.2 1.4 1.9 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.2 stencil apertures copper solder mask r0.1 0.05 max. +0.1 0.4 1) dimension applies to plated terminal 0.035 1.2 0.05 1 0.05 1.3 0.05 1.7 0.05 2 6 x 0.2 0.035 1) 6 x 0.2 0.035 1) 0.035 1.1 1) 456 1 2 3 7 1) top view bottom view pin 1 marking tslp-7-1-po v04 tslp-7-1-tp v0 3 1.45 4 8 2.18 0.5 pin 1 marking
data sheet 23 v3.0, 2009-07-02 BGA777L7 - low power single-band umts lna physical characteristics package dimensions figure 11 marking layout %*$/b0dunlqjb/d\rxwyvg % %*$/ 7\shfrgh &: 'dwhfrgh<<:: 3lqpdunlqj /dvhupdunlqj
published by infineon technologies ag www.infineon.com

▲Up To Search▲

Price & Availability of BGA777L7

	To Download BGA777L7 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .